Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge

Resistive switching is an important phenomenon for future memory devices such as resistance random access memories or neuronal networks. While there are different types of resistive switching, such as filament or interface switching, this work focuses on bulk switching in amorphous, binary oxides. B...

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Detalles Bibliográficos
Autores principales: Ader, Christiane, Falkenstein, Andreas, Martin, Manfred
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8277833/
https://www.ncbi.nlm.nih.gov/pubmed/34257338
http://dx.doi.org/10.1038/s41598-021-93777-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8277833/
https://www.ncbi.nlm.nih.gov/pubmed/34257338
http://dx.doi.org/10.1038/s41598-021-93777-6

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