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Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge
Resistive switching is an important phenomenon for future memory devices such as resistance random access memories or neuronal networks. While there are different types of resistive switching, such as filament or interface switching, this work focuses on bulk switching in amorphous, binary oxides. B...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8277833/ https://www.ncbi.nlm.nih.gov/pubmed/34257338 http://dx.doi.org/10.1038/s41598-021-93777-6 |