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Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser Deposition
[Image: see text] Pulsed UV laser deposition was exploited for the preparation of thin Sn(50–x)As(x)Se(50) (x = 0, 0.05, 0.5, and 2.5) films with the aim of investigating the influence of low arsenic concentration on the properties of the deposited layers. It was found that the selected deposition m...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American
Chemical Society
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8280661/ https://www.ncbi.nlm.nih.gov/pubmed/34278134 http://dx.doi.org/10.1021/acsomega.1c01892 |