Polarization-insensitive GaN metalenses at visible wavelengths

The growth of wide-bandgap materials on patterned substrates has revolutionized the means with which we can improve the light output power of gallium nitride (GaN) light-emitting diodes (LEDs). Conventional patterned structure inspection usually relies on an expensive vacuum-system-required scanning...

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Detalles Bibliográficos
Autores principales: Chen, Meng-Hsin, Yen, Cheng-Wei, Guo, Chia-Chun, Su, Vin-Cent, Kuan, Chieh-Hsiung, Lin, Hoang Yan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8282812/
https://www.ncbi.nlm.nih.gov/pubmed/34267286
http://dx.doi.org/10.1038/s41598-021-94176-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8282812/
https://www.ncbi.nlm.nih.gov/pubmed/34267286
http://dx.doi.org/10.1038/s41598-021-94176-7

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