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Polarization-insensitive GaN metalenses at visible wavelengths

The growth of wide-bandgap materials on patterned substrates has revolutionized the means with which we can improve the light output power of gallium nitride (GaN) light-emitting diodes (LEDs). Conventional patterned structure inspection usually relies on an expensive vacuum-system-required scanning...

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Autores principales: Chen, Meng-Hsin, Yen, Cheng-Wei, Guo, Chia-Chun, Su, Vin-Cent, Kuan, Chieh-Hsiung, Lin, Hoang Yan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8282812/
https://www.ncbi.nlm.nih.gov/pubmed/34267286
http://dx.doi.org/10.1038/s41598-021-94176-7
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author Chen, Meng-Hsin
Yen, Cheng-Wei
Guo, Chia-Chun
Su, Vin-Cent
Kuan, Chieh-Hsiung
Lin, Hoang Yan
author_facet Chen, Meng-Hsin
Yen, Cheng-Wei
Guo, Chia-Chun
Su, Vin-Cent
Kuan, Chieh-Hsiung
Lin, Hoang Yan
author_sort Chen, Meng-Hsin
collection PubMed
description The growth of wide-bandgap materials on patterned substrates has revolutionized the means with which we can improve the light output power of gallium nitride (GaN) light-emitting diodes (LEDs). Conventional patterned structure inspection usually relies on an expensive vacuum-system-required scanning electron microscope (SEM) or optical microscope (OM) with bulky objectives. On the other hand, ultra-thin metasurfaces have been widely used in widespread applications, especially for converging lenses. In this study, we propose newly developed, highly efficient hexagon-resonated elements (HREs) combined with gingerly selected subwavelength periods of the elements for the construction of polarization-insensitive metalenses of high performance. Also, the well-developed fabrication techniques have been employed to realize the high-aspect-ratio metalenses working at three distinct wavelengths of 405, 532, and 633 nm with respective diffraction-limited focusing efficiencies of 93%, 86%, and 92%. The 1951 United States Air Force (USAF) test chart has been chosen to characterize the imaging capability. All of the images formed by the 405-nm-designed metalens show exceptional clear line features, and the smallest resolvable features are lines with widths of 870 nm. To perform the inspection capacity for patterned substrates, for the proof of concept, a commercially available patterned sapphire substrate (PSS) for the growth of the GaN LEDs has been opted and carefully examined by the high-resolution SEM system. With the appropriately chosen metalenses at the desired wavelength, the summits of structures in the PSS can be clearly observed in the images. The PSS imaging qualities taken by the ultra-thin and light-weight metalenses with a numerical aperture (NA) of 0.3 are comparable to those seen by an objective with the NA of 0.4. This work can pioneer semiconductor manufacturing to choose the polarization-insensitive GaN metalenses to inspect the patterned structures instead of using the SEM or the bulky and heavy conventional objectives.
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spelling pubmed-82828122021-07-19 Polarization-insensitive GaN metalenses at visible wavelengths Chen, Meng-Hsin Yen, Cheng-Wei Guo, Chia-Chun Su, Vin-Cent Kuan, Chieh-Hsiung Lin, Hoang Yan Sci Rep Article The growth of wide-bandgap materials on patterned substrates has revolutionized the means with which we can improve the light output power of gallium nitride (GaN) light-emitting diodes (LEDs). Conventional patterned structure inspection usually relies on an expensive vacuum-system-required scanning electron microscope (SEM) or optical microscope (OM) with bulky objectives. On the other hand, ultra-thin metasurfaces have been widely used in widespread applications, especially for converging lenses. In this study, we propose newly developed, highly efficient hexagon-resonated elements (HREs) combined with gingerly selected subwavelength periods of the elements for the construction of polarization-insensitive metalenses of high performance. Also, the well-developed fabrication techniques have been employed to realize the high-aspect-ratio metalenses working at three distinct wavelengths of 405, 532, and 633 nm with respective diffraction-limited focusing efficiencies of 93%, 86%, and 92%. The 1951 United States Air Force (USAF) test chart has been chosen to characterize the imaging capability. All of the images formed by the 405-nm-designed metalens show exceptional clear line features, and the smallest resolvable features are lines with widths of 870 nm. To perform the inspection capacity for patterned substrates, for the proof of concept, a commercially available patterned sapphire substrate (PSS) for the growth of the GaN LEDs has been opted and carefully examined by the high-resolution SEM system. With the appropriately chosen metalenses at the desired wavelength, the summits of structures in the PSS can be clearly observed in the images. The PSS imaging qualities taken by the ultra-thin and light-weight metalenses with a numerical aperture (NA) of 0.3 are comparable to those seen by an objective with the NA of 0.4. This work can pioneer semiconductor manufacturing to choose the polarization-insensitive GaN metalenses to inspect the patterned structures instead of using the SEM or the bulky and heavy conventional objectives. Nature Publishing Group UK 2021-07-15 /pmc/articles/PMC8282812/ /pubmed/34267286 http://dx.doi.org/10.1038/s41598-021-94176-7 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Chen, Meng-Hsin
Yen, Cheng-Wei
Guo, Chia-Chun
Su, Vin-Cent
Kuan, Chieh-Hsiung
Lin, Hoang Yan
Polarization-insensitive GaN metalenses at visible wavelengths
title Polarization-insensitive GaN metalenses at visible wavelengths
title_full Polarization-insensitive GaN metalenses at visible wavelengths
title_fullStr Polarization-insensitive GaN metalenses at visible wavelengths
title_full_unstemmed Polarization-insensitive GaN metalenses at visible wavelengths
title_short Polarization-insensitive GaN metalenses at visible wavelengths
title_sort polarization-insensitive gan metalenses at visible wavelengths
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8282812/
https://www.ncbi.nlm.nih.gov/pubmed/34267286
http://dx.doi.org/10.1038/s41598-021-94176-7
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