Atomic origin of spin-valve magnetoresistance at the SrRuO(3) grain boundary

Defects exist ubiquitously in crystal materials, and usually exhibit a very different nature from the bulk matrix. Hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the properties of defects are determined by their unique atomic enviro...

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Detalles Bibliográficos
Autores principales: Li, Xujing, Yin, Li, Lai, Zhengxun, Wu, Mei, Sheng, Yu, Zhang, Lei, Sun, Yuanwei, Chen, Shulin, Li, Xiaomei, Zhang, Jingmin, Li, Yuehui, Liu, Kaihui, Wang, Kaiyou, Yu, Dapeng, Bai, Xuedong, Mi, Wenbo, Gao, Peng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Oxford University Press 2020
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8288863/
https://www.ncbi.nlm.nih.gov/pubmed/34692094
http://dx.doi.org/10.1093/nsr/nwaa004

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8288863/
https://www.ncbi.nlm.nih.gov/pubmed/34692094
http://dx.doi.org/10.1093/nsr/nwaa004

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