Electron Doping Effect in the Resistive Switching Properties of Al/Gd(1–x)Ca(x)MnO(3)/Au Memristor Devices

[Image: see text] We report on the resistive switching (RS) properties of Al/Gd(1–x)Ca(x)MnO(3) (GCMO)/Au thin-film memristors. The devices were studied over the whole calcium substitution range x as a function of electrical field and temperature. The RS properties were found to be highly dependent...

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Detalles Bibliográficos
Autores principales: Lähteenlahti, Ville, Schulman, Alejandro, Beiranvand, Azar, Huhtinen, Hannu, Paturi, Petriina
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8288910/
https://www.ncbi.nlm.nih.gov/pubmed/33832220
http://dx.doi.org/10.1021/acsami.1c02963

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8288910/
https://www.ncbi.nlm.nih.gov/pubmed/33832220
http://dx.doi.org/10.1021/acsami.1c02963

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