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Electron Doping Effect in the Resistive Switching Properties of Al/Gd(1–x)Ca(x)MnO(3)/Au Memristor Devices
[Image: see text] We report on the resistive switching (RS) properties of Al/Gd(1–x)Ca(x)MnO(3) (GCMO)/Au thin-film memristors. The devices were studied over the whole calcium substitution range x as a function of electrical field and temperature. The RS properties were found to be highly dependent...
Autores principales: | Lähteenlahti, Ville, Schulman, Alejandro, Beiranvand, Azar, Huhtinen, Hannu, Paturi, Petriina |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American
Chemical Society
2021
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8288910/ https://www.ncbi.nlm.nih.gov/pubmed/33832220 http://dx.doi.org/10.1021/acsami.1c02963 |
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