Boosting Polarization Switching-Induced Current Injection by Mechanical Force in Ferroelectric Thin Films

[Image: see text] When scaling the lateral size of a ferroelectric random access memory (FeRAM) device down to the nanometer range, the polarization switching-induced displacement current becomes small and challenging to detect, which greatly limits the storage density of FeRAM. Here, we report the...

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Detalles Bibliográficos
Autores principales: Zhang, Fengyuan, Fan, Hua, Han, Bing, Zhu, Yudong, Deng, Xiong, Edwards, David, Kumar, Amit, Chen, Deyang, Gao, Xingsen, Fan, Zhen, Rodriguez, Brian J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8289170/
https://www.ncbi.nlm.nih.gov/pubmed/34036789
http://dx.doi.org/10.1021/acsami.1c04912

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8289170/
https://www.ncbi.nlm.nih.gov/pubmed/34036789
http://dx.doi.org/10.1021/acsami.1c04912

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