Tuning Hole Mobility of Individual p-Doped GaAs Nanowires by Uniaxial Tensile Stress

[Image: see text] Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of strain-induced modifications of hole mobilit...

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Detalles Bibliográficos
Autores principales: Zeng, Lunjie, Holmér, Jonatan, Dhall, Rohan, Gammer, Christoph, Minor, Andrew M., Olsson, Eva
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8289290/
https://www.ncbi.nlm.nih.gov/pubmed/33914543
http://dx.doi.org/10.1021/acs.nanolett.1c00353

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8289290/
https://www.ncbi.nlm.nih.gov/pubmed/33914543
http://dx.doi.org/10.1021/acs.nanolett.1c00353

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