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Tuning Hole Mobility of Individual p-Doped GaAs Nanowires by Uniaxial Tensile Stress
[Image: see text] Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of strain-induced modifications of hole mobilit...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8289290/ https://www.ncbi.nlm.nih.gov/pubmed/33914543 http://dx.doi.org/10.1021/acs.nanolett.1c00353 |