Poly(styrene)-block-Maltoheptaose Films for Sub-10 nm Pattern Transfer: Implications for Transistor Fabrication

[Image: see text] Sequential infiltration synthesis (SIS) into poly(styrene)-block-maltoheptaose (PS-b-MH) block copolymer using vapors of trimethyl aluminum and water was used to prepare nanostructured surface layers. Prior to the infiltration, the PS-b-MH had been self-assembled into 12 nm pattern...

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Detalles Bibliográficos
Autores principales: Löfstrand, Anette, Jafari Jam, Reza, Mothander, Karolina, Nylander, Tommy, Mumtaz, Muhammad, Vorobiev, Alexei, Chen, Wen-Chang, Borsali, Redouane, Maximov, Ivan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8290925/
https://www.ncbi.nlm.nih.gov/pubmed/34308267
http://dx.doi.org/10.1021/acsanm.1c00582

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8290925/
https://www.ncbi.nlm.nih.gov/pubmed/34308267
http://dx.doi.org/10.1021/acsanm.1c00582

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