Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps †

This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against measurement data. The presence of traps and activatio...

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Detalles Bibliográficos
Autores principales: Song, Yu-Lin, Reddy, Manoj Kumar, Chang, Luh-Maan, Sheu, Gene
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8303573/
https://www.ncbi.nlm.nih.gov/pubmed/34206818
http://dx.doi.org/10.3390/mi12070751

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8303573/
https://www.ncbi.nlm.nih.gov/pubmed/34206818
http://dx.doi.org/10.3390/mi12070751

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