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Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps †

This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against measurement data. The presence of traps and activatio...

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Detalles Bibliográficos
Autores principales: Song, Yu-Lin, Reddy, Manoj Kumar, Chang, Luh-Maan, Sheu, Gene
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8303573/
https://www.ncbi.nlm.nih.gov/pubmed/34206818
http://dx.doi.org/10.3390/mi12070751
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author Song, Yu-Lin
Reddy, Manoj Kumar
Chang, Luh-Maan
Sheu, Gene
author_facet Song, Yu-Lin
Reddy, Manoj Kumar
Chang, Luh-Maan
Sheu, Gene
author_sort Song, Yu-Lin
collection PubMed
description This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against measurement data. The presence of traps and activation energies in the device structure will impact the performance of a device, the source of traps and position of traps in the device remains as a complex exercise until today. The key parameters for the precise tuning of threshold voltage (V(th)) in GaN transistors are the control of the positive fixed charges −5 × 10(12) cm(−2), donor-like traps −3 × 10(13) cm(−2) at the nitride/GaN interfaces, the energy of the donor-like traps 1.42 eV below the conduction band and the acceptor traps activation energy in the AlGaN layer and buffer regions with 0.59 eV below the conduction band. Hence in this paper, the sensitivity of the trap mechanisms in GaN/AlGaN/GaN HEMT transistors, understanding the absolute vertical electric field distribution, electron density and the physical characteristics of the device has been investigated and the results are in good agreement with GaN experimental data.
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spelling pubmed-83035732021-07-25 Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps † Song, Yu-Lin Reddy, Manoj Kumar Chang, Luh-Maan Sheu, Gene Micromachines (Basel) Article This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against measurement data. The presence of traps and activation energies in the device structure will impact the performance of a device, the source of traps and position of traps in the device remains as a complex exercise until today. The key parameters for the precise tuning of threshold voltage (V(th)) in GaN transistors are the control of the positive fixed charges −5 × 10(12) cm(−2), donor-like traps −3 × 10(13) cm(−2) at the nitride/GaN interfaces, the energy of the donor-like traps 1.42 eV below the conduction band and the acceptor traps activation energy in the AlGaN layer and buffer regions with 0.59 eV below the conduction band. Hence in this paper, the sensitivity of the trap mechanisms in GaN/AlGaN/GaN HEMT transistors, understanding the absolute vertical electric field distribution, electron density and the physical characteristics of the device has been investigated and the results are in good agreement with GaN experimental data. MDPI 2021-06-26 /pmc/articles/PMC8303573/ /pubmed/34206818 http://dx.doi.org/10.3390/mi12070751 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Song, Yu-Lin
Reddy, Manoj Kumar
Chang, Luh-Maan
Sheu, Gene
Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps †
title Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps †
title_full Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps †
title_fullStr Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps †
title_full_unstemmed Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps †
title_short Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps †
title_sort physics-based tcad simulation and calibration of 600 v gan/algan/gan device characteristics and analysis of interface traps †
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8303573/
https://www.ncbi.nlm.nih.gov/pubmed/34206818
http://dx.doi.org/10.3390/mi12070751
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