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Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps †
This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against measurement data. The presence of traps and activatio...
Autores principales: | Song, Yu-Lin, Reddy, Manoj Kumar, Chang, Luh-Maan, Sheu, Gene |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8303573/ https://www.ncbi.nlm.nih.gov/pubmed/34206818 http://dx.doi.org/10.3390/mi12070751 |
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