The Evolution of Manufacturing Technology for GaN Electronic Devices

GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-...

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Detalles Bibliográficos
Autores principales: Liu, An-Chen, Tu, Po-Tsung, Langpoklakpam, Catherine, Huang, Yu-Wen, Chang, Ya-Ting, Tzou, An-Jye, Hsu, Lung-Hsing, Lin, Chun-Hsiung, Kuo, Hao-Chung, Chang, Edward Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8305582/
https://www.ncbi.nlm.nih.gov/pubmed/34201620
http://dx.doi.org/10.3390/mi12070737

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8305582/
https://www.ncbi.nlm.nih.gov/pubmed/34201620
http://dx.doi.org/10.3390/mi12070737

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