Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures

This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static characteristics of the traditional vertical MO...

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Detalles Bibliográficos
Autores principales: Chen, Chia-Yuan, Lai, Yun-Kai, Lee, Kung-Yen, Huang, Chih-Fang, Huang, Shin-Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8306660/
https://www.ncbi.nlm.nih.gov/pubmed/34198997
http://dx.doi.org/10.3390/mi12070756

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8306660/
https://www.ncbi.nlm.nih.gov/pubmed/34198997
http://dx.doi.org/10.3390/mi12070756

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