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Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures

This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static characteristics of the traditional vertical MO...

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Detalles Bibliográficos
Autores principales:	Chen, Chia-Yuan, Lai, Yun-Kai, Lee, Kung-Yen, Huang, Chih-Fang, Huang, Shin-Yi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8306660/ https://www.ncbi.nlm.nih.gov/pubmed/34198997 http://dx.doi.org/10.3390/mi12070756

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