Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics

In this paper, to solve the epitaxial thickness limit and the high interface trap density of SiGe channel Fin field effect transistor (FinFET), a four-period vertically stacked SiGe/Si channel FinFET is presented. A high crystal quality of four-period stacked SiGe/Si multilayer epitaxial grown with...

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Detalles Bibliográficos
Autores principales: Li, Yongliang, Zhao, Fei, Cheng, Xiaohong, Liu, Haoyan, Zan, Ying, Li, Junjie, Zhang, Qingzhu, Wu, Zhenhua, Luo, Jun, Wang, Wenwu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8307669/
https://www.ncbi.nlm.nih.gov/pubmed/34203194
http://dx.doi.org/10.3390/nano11071689

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8307669/
https://www.ncbi.nlm.nih.gov/pubmed/34203194
http://dx.doi.org/10.3390/nano11071689

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