Improvement of p-Type AlGaN Conductivity with an Alternating Mg-Doped/Un-Doped AlGaN Layer Structure

Using molecular beam epitaxy, we prepared seven p-type AlGaN samples of ~25% in Al content, including six samples with Mg-doped/un-doped AlGaN alternating-layer structures of different layer-thickness combinations, for comparing their p-type performances. Lower sheet resistance and higher effective...

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Detalles Bibliográficos
Autores principales: Chen, Chi-Chung, Lin, Yu-Ren, Lin, Yu-Wei, Su, Yu-Cheng, Chen, Chung-Chi, Huang, Ting-Chun, Wu, Ping-Hsiu, Yang, C. C., Mou, Shin, Averett, Kent L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8307679/
https://www.ncbi.nlm.nih.gov/pubmed/34357245
http://dx.doi.org/10.3390/mi12070835

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8307679/
https://www.ncbi.nlm.nih.gov/pubmed/34357245
http://dx.doi.org/10.3390/mi12070835

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