High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT

The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the sample with a 450 sccm Cp(2)Mg flow rate reached a max...

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Detalles Bibliográficos
Autores principales: Dai, Jin-Ji, Mai, Thi Thu, Wu, Ssu-Kuan, Peng, Jing-Rong, Liu, Cheng-Wei, Wen, Hua-Chiang, Chou, Wu-Ching, Ho, Han-Chieh, Wang, Wei-Fan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8308141/
https://www.ncbi.nlm.nih.gov/pubmed/34361152
http://dx.doi.org/10.3390/nano11071766

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8308141/
https://www.ncbi.nlm.nih.gov/pubmed/34361152
http://dx.doi.org/10.3390/nano11071766

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