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High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT
The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the sample with a 450 sccm Cp(2)Mg flow rate reached a max...
Autores principales: | Dai, Jin-Ji, Mai, Thi Thu, Wu, Ssu-Kuan, Peng, Jing-Rong, Liu, Cheng-Wei, Wen, Hua-Chiang, Chou, Wu-Ching, Ho, Han-Chieh, Wang, Wei-Fan |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8308141/ https://www.ncbi.nlm.nih.gov/pubmed/34361152 http://dx.doi.org/10.3390/nano11071766 |
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