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Effects of Buffer Concentration on the Sensitivity of Silicon Nanobelt Field-Effect Transistor Sensors
In this work, a single-crystalline silicon nanobelt field-effect transistor (SiNB FET) device was developed and applied to pH and biomolecule sensing. The nanobelt was formed using a local oxidation of silicon technique, which is a self-aligned, self-shrinking process that reduces the cost of produc...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8309807/ https://www.ncbi.nlm.nih.gov/pubmed/34300642 http://dx.doi.org/10.3390/s21144904 |