On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance

[Image: see text] Despite the extensive ongoing research on MoS(2) field effect transistors (FETs), the key role of device processing conditions in the chemistry involved at the metal-to-MoS(2) interface and their influence on the electrical performance are often overlooked. In addition, the majorit...

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Detalles Bibliográficos
Autores principales: Mahlouji, Reyhaneh, Zhang, Yue, Verheijen, Marcel A., Hofmann, Jan P., Kessels, Wilhelmus M. M., Sagade, Abhay A., Bol, Ageeth A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8320240/
https://www.ncbi.nlm.nih.gov/pubmed/34337417
http://dx.doi.org/10.1021/acsaelm.1c00379

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8320240/
https://www.ncbi.nlm.nih.gov/pubmed/34337417
http://dx.doi.org/10.1021/acsaelm.1c00379

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