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On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
[Image: see text] Despite the extensive ongoing research on MoS(2) field effect transistors (FETs), the key role of device processing conditions in the chemistry involved at the metal-to-MoS(2) interface and their influence on the electrical performance are often overlooked. In addition, the majorit...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American
Chemical Society
2021
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8320240/ https://www.ncbi.nlm.nih.gov/pubmed/34337417 http://dx.doi.org/10.1021/acsaelm.1c00379 |
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author | Mahlouji, Reyhaneh Zhang, Yue Verheijen, Marcel A. Hofmann, Jan P. Kessels, Wilhelmus M. M. Sagade, Abhay A. Bol, Ageeth A. |
author_facet | Mahlouji, Reyhaneh Zhang, Yue Verheijen, Marcel A. Hofmann, Jan P. Kessels, Wilhelmus M. M. Sagade, Abhay A. Bol, Ageeth A. |
author_sort | Mahlouji, Reyhaneh |
collection | PubMed |
description | [Image: see text] Despite the extensive ongoing research on MoS(2) field effect transistors (FETs), the key role of device processing conditions in the chemistry involved at the metal-to-MoS(2) interface and their influence on the electrical performance are often overlooked. In addition, the majority of reports on MoS(2) contacts are based on exfoliated MoS(2), whereas synthetic films are even more susceptible to the changes made in device processing conditions. In this paper, working FETs with atomic layer deposition (ALD)-based MoS(2) films and Ti/Au contacts are demonstrated, using current–voltage (I–V) characterization. In pursuit of optimizing the contacts, high-vacuum thermal annealing as well as O(2)/Ar plasma cleaning treatments are introduced, and their influence on the electrical performance is studied. The electrical findings are linked to the interface chemistry through X-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM) analyses. XPS evaluation reveals that the concentration of organic residues on the MoS(2) surface, as a result of resist usage during the device processing, is significant. Removal of these contaminations with O(2)/Ar plasma changes the MoS(2) chemical state and enhances the MoS(2) electrical properties. Based on the STEM analysis, the observed progress in the device electrical characteristics could also be associated with the formation of a continuous TiS(x) layer at the Ti-to-MoS(2) interface. Scaling down the Ti interlayer thickness and replacing it with Cr is found to be beneficial as well, leading to further device performance advancements. Our findings are of value for attaining optimal contacts to synthetic MoS(2) films. |
format | Online Article Text |
id | pubmed-8320240 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | American
Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-83202402021-07-29 On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance Mahlouji, Reyhaneh Zhang, Yue Verheijen, Marcel A. Hofmann, Jan P. Kessels, Wilhelmus M. M. Sagade, Abhay A. Bol, Ageeth A. ACS Appl Electron Mater [Image: see text] Despite the extensive ongoing research on MoS(2) field effect transistors (FETs), the key role of device processing conditions in the chemistry involved at the metal-to-MoS(2) interface and their influence on the electrical performance are often overlooked. In addition, the majority of reports on MoS(2) contacts are based on exfoliated MoS(2), whereas synthetic films are even more susceptible to the changes made in device processing conditions. In this paper, working FETs with atomic layer deposition (ALD)-based MoS(2) films and Ti/Au contacts are demonstrated, using current–voltage (I–V) characterization. In pursuit of optimizing the contacts, high-vacuum thermal annealing as well as O(2)/Ar plasma cleaning treatments are introduced, and their influence on the electrical performance is studied. The electrical findings are linked to the interface chemistry through X-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM) analyses. XPS evaluation reveals that the concentration of organic residues on the MoS(2) surface, as a result of resist usage during the device processing, is significant. Removal of these contaminations with O(2)/Ar plasma changes the MoS(2) chemical state and enhances the MoS(2) electrical properties. Based on the STEM analysis, the observed progress in the device electrical characteristics could also be associated with the formation of a continuous TiS(x) layer at the Ti-to-MoS(2) interface. Scaling down the Ti interlayer thickness and replacing it with Cr is found to be beneficial as well, leading to further device performance advancements. Our findings are of value for attaining optimal contacts to synthetic MoS(2) films. American Chemical Society 2021-06-28 2021-07-27 /pmc/articles/PMC8320240/ /pubmed/34337417 http://dx.doi.org/10.1021/acsaelm.1c00379 Text en © 2021 The Authors. Published by American Chemical Society Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/). |
spellingShingle | Mahlouji, Reyhaneh Zhang, Yue Verheijen, Marcel A. Hofmann, Jan P. Kessels, Wilhelmus M. M. Sagade, Abhay A. Bol, Ageeth A. On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance |
title | On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry
with Device Electrical Performance |
title_full | On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry
with Device Electrical Performance |
title_fullStr | On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry
with Device Electrical Performance |
title_full_unstemmed | On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry
with Device Electrical Performance |
title_short | On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry
with Device Electrical Performance |
title_sort | on the contact optimization of ald-based mos(2) fets: correlation of processing conditions and interface chemistry
with device electrical performance |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8320240/ https://www.ncbi.nlm.nih.gov/pubmed/34337417 http://dx.doi.org/10.1021/acsaelm.1c00379 |
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