Cargando…

On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance

[Image: see text] Despite the extensive ongoing research on MoS(2) field effect transistors (FETs), the key role of device processing conditions in the chemistry involved at the metal-to-MoS(2) interface and their influence on the electrical performance are often overlooked. In addition, the majorit...

Descripción completa

Detalles Bibliográficos
Autores principales:	Mahlouji, Reyhaneh, Zhang, Yue, Verheijen, Marcel A., Hofmann, Jan P., Kessels, Wilhelmus M. M., Sagade, Abhay A., Bol, Ageeth A.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2021
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8320240/ https://www.ncbi.nlm.nih.gov/pubmed/34337417 http://dx.doi.org/10.1021/acsaelm.1c00379

Ejemplares similares

ALD-grown two-dimensional TiS(x) metal contacts for MoS(2) field-effect transistors
por: Mahlouji, Reyhaneh, et al.
Publicado: (2023)

Atomic Layer Deposition of Al-Doped MoS(2): Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density
por: Vandalon, Vincent, et al.
Publicado: (2020)

Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS(2) Thin Films at 150 °C
por: Mattinen, Miika, et al.
Publicado: (2023)

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry
por: Mattinen, Miika, et al.
Publicado: (2022)

Conformal Growth of Nanometer-Thick Transition Metal Dichalcogenide TiS(x)-NbS(x) Heterostructures over 3D Substrates by Atomic Layer Deposition: Implications for Device Fabrication
por: Basuvalingam, Saravana Balaji, et al.
Publicado: (2021)

Uniform Atomic Layer Deposition of Al(2)O(3) on Graphene by Reversible Hydrogen Plasma Functionalization
por: Vervuurt, René H. J., et al.
Publicado: (2017)

Operation Mechanism of a MoS(2)/BP Heterojunction FET
por: Lim, Sung Kwan, et al.
Publicado: (2018)

Advances in MoS(2)-Based Field Effect Transistors (FETs)
por: Tong, Xin, et al.
Publicado: (2015)

The Origin of High Activity of Amorphous MoS(2) in the Hydrogen Evolution Reaction
por: Wu, Longfei, et al.
Publicado: (2019)

Edge-Site Nanoengineering of WS(2) by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
por: Balasubramanyam, Shashank, et al.
Publicado: (2019)

Area-Selective Atomic Layer Deposition of Two-Dimensional WS(2) Nanolayers
por: Balasubramanyam, Shashank, et al.
Publicado: (2020)

Modulation of Contact Resistance of Dual‐Gated MoS(2) FETs Using Fermi‐Level Pinning‐Free Antimony Semi‐Metal Contacts
por: Ngo, Tien Dat, et al.
Publicado: (2023)

Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS(2) Layers
por: Balasubramanyam, Shashank, et al.
Publicado: (2019)

Electrocatalytic Performance of Titania Nanotube Arrays Coated with MoS(2) by ALD toward the Hydrogen Evolution Reaction
por: Cao, Yuanyuan, et al.
Publicado: (2019)

Low-Temperature Phase-Controlled Synthesis of Titanium Di- and Tri-sulfide by Atomic Layer Deposition
por: Basuvalingam, Saravana Balaji, et al.
Publicado: (2019)

Electronic properties of MoS(2)/MoO(x) interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts
por: K. C., Santosh, et al.
Publicado: (2016)

Interface contact and modulated electronic properties by in-plain strains in a graphene–MoS(2) heterostructure
por: Wang, Qian, et al.
Publicado: (2023)

Nanoscale redox mapping at the MoS(2)-liquid interface
por: Du, He-Yun, et al.
Publicado: (2021)

Edge contacts accelerate the response of MoS(2) photodetectors
por: Strauß, Fabian, et al.
Publicado: (2023)

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS(2) FETs Using Buried-Gate Structures
por: Lee, Ju-Ah, et al.
Publicado: (2023)

Interface-Driven Assembly of Pentacene/MoS(2) Lateral Heterostructures
por: Tumino, Francesco, et al.
Publicado: (2022)

Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer
por: He, Gang, et al.
Publicado: (2019)

Effect of Al(2)O(3) Passive Layer on Stability and Doping of MoS(2) Field-Effect Transistor (FET) Biosensors
por: Pham, Tung, et al.
Publicado: (2021)

Effects of Charge Trapping at the MoS(2)–SiO(2) Interface on the Stability of Subthreshold Swing of MoS(2) Field Effect Transistors
por: Huang, Xinnan, et al.
Publicado: (2020)

MOS-FET as a Current Sensor in Power Electronics Converters
por: Pajer, Rok, et al.
Publicado: (2015)

Chemical Analysis of the Interface between Hybrid Organic–Inorganic Perovskite and Atomic Layer Deposited Al(2)O(3)
por: Koushik, Dibyashree, et al.
Publicado: (2019)

Optical Anisotropy and Excitons in MoS(2) Interfaces for Sensitive Surface Plasmon Resonance Biosensors
por: Eghbali, Amir, et al.
Publicado: (2022)

Interlayer charge transfer in supported and suspended MoS(2)/Graphene/MoS(2) vertical heterostructures
por: Rocha Robledo, Ana K., et al.
Publicado: (2023)

Non-volatile resistive switching mechanism in single-layer MoS(2) memristors: insights from ab initio modelling of Au and MoS(2) interfaces
por: Boschetto, Gabriele, et al.
Publicado: (2023)

Room-Temperature Production of Nanocrystalline Molybdenum Disulfide (MoS(2)) at the Liquid−Liquid Interface
por: Higgins, Eliott P. C., et al.
Publicado: (2019)

Electron tomography and fractal aspects of MoS(2) and MoS(2)/Co spheres
por: Ramos, Manuel, et al.
Publicado: (2017)

The Interface between Gd and Monolayer MoS(2): A First-Principles Study
por: Zhang, Xuejing, et al.
Publicado: (2014)

Investigation of Nitridation on the Band Alignment at MoS(2)/HfO(2) Interfaces
por: Huan, Ya-Wei, et al.
Publicado: (2019)

Interface Engineering Modulated Valley Polarization in MoS(2)/hBN Heterostructure
por: Li, Fang, et al.
Publicado: (2023)

Electron Irradiation of Metal Contacts in Monolayer MoS(2) Field-Effect Transistors
por: Pelella, Aniello, et al.
Publicado: (2020)

Integrated contact lens sensor system based on multifunctional ultrathin MoS(2) transistors
por: Guo, Shiqi, et al.
Publicado: (2021)

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS(2) and HfO(2) High-k Dielectric
por: Xia, Pengkun, et al.
Publicado: (2017)

Study of tribological behavior of Cu–MoS(2) and Ag–MoS(2) nanocomposite lubricants
por: An, V., et al.
Publicado: (2016)

Magnetism in monolayer 1T-MoS(2) and 1T-MoS(2)H tuned by strain
por: Xu, Wei, et al.
Publicado: (2018)

MoS(2) formation induced by amorphous MoS(3) species under lubricated friction
por: Oumahi, C., et al.
Publicado: (2018)

Cannot write session to /tmp/vufind_sessions/sess_sn67patfcetn42c6vus76ged40