Low‐Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe(2) for In‐Memory Computing

Memristive logic device is a promising unit for beyond von Neumann computing systems and 2D materials are widely used because of their controllable interfacial properties. Most of these 2D memristive devices, however, are made from semiconducting chalcogenides which fail to gate the off‐state curren...

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Detalles Bibliográficos
Autores principales: Liu, Long, Li, Yi, Huang, Xiaodi, Chen, Jia, Yang, Zhe, Xue, Kan‐Hao, Xu, Ming, Chen, Huawei, Zhou, Peng, Miao, Xiangshui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2021
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8336485/
https://www.ncbi.nlm.nih.gov/pubmed/34050639
http://dx.doi.org/10.1002/advs.202005038

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8336485/
https://www.ncbi.nlm.nih.gov/pubmed/34050639
http://dx.doi.org/10.1002/advs.202005038

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