Ge N-Channel MOSFETs with ZrO(2) Dielectric Achieving Improved Mobility

High-mobility Ge nMOSFETs with ZrO(2) gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O(3)) treatment, O(3) post-treatment and without O(3) treatment. It is found that with O(3) treatment, the Ge nMOSFETs with ZrO(2) dielectric having...

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Detalles Bibliográficos
Autores principales: Chou, Lulu, Liu, Yan, Xu, Yang, Peng, Yue, Liu, Huan, Yu, Xiao, Han, Genquan, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8339179/
https://www.ncbi.nlm.nih.gov/pubmed/34347193
http://dx.doi.org/10.1186/s11671-021-03577-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8339179/
https://www.ncbi.nlm.nih.gov/pubmed/34347193
http://dx.doi.org/10.1186/s11671-021-03577-0

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