Ge N-Channel MOSFETs with ZrO(2) Dielectric Achieving Improved Mobility

High-mobility Ge nMOSFETs with ZrO(2) gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O(3)) treatment, O(3) post-treatment and without O(3) treatment. It is found that with O(3) treatment, the Ge nMOSFETs with ZrO(2) dielectric having...

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Autores principales: Chou, Lulu, Liu, Yan, Xu, Yang, Peng, Yue, Liu, Huan, Yu, Xiao, Han, Genquan, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8339179/
https://www.ncbi.nlm.nih.gov/pubmed/34347193
http://dx.doi.org/10.1186/s11671-021-03577-0
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author Chou, Lulu
Liu, Yan
Xu, Yang
Peng, Yue
Liu, Huan
Yu, Xiao
Han, Genquan
Hao, Yue
author_facet Chou, Lulu
Liu, Yan
Xu, Yang
Peng, Yue
Liu, Huan
Yu, Xiao
Han, Genquan
Hao, Yue
author_sort Chou, Lulu
collection PubMed
description High-mobility Ge nMOSFETs with ZrO(2) gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O(3)) treatment, O(3) post-treatment and without O(3) treatment. It is found that with O(3) treatment, the Ge nMOSFETs with ZrO(2) dielectric having a EOT of 0.83 nm obtain a peak effective electron mobility (μ(eff)) of 682 cm(2)/Vs, which is higher than that of the Si universal mobility at the medium inversion charge density (Q(inv)). On the other hand, the O(3) post-treatment with Al(2)O(3) interfacial layer can provide dramatically enhanced-μ(eff), achieving about 50% μ(eff) improvement as compared to the Si universal mobility at medium Q(inv) of 5 × 10(12) cm(−2). These results indicate the potential utilization of ZrO(2) dielectric in high-performance Ge nMOSFETs.
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spelling pubmed-83391792021-08-20 Ge N-Channel MOSFETs with ZrO(2) Dielectric Achieving Improved Mobility Chou, Lulu Liu, Yan Xu, Yang Peng, Yue Liu, Huan Yu, Xiao Han, Genquan Hao, Yue Nanoscale Res Lett Nano Express High-mobility Ge nMOSFETs with ZrO(2) gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O(3)) treatment, O(3) post-treatment and without O(3) treatment. It is found that with O(3) treatment, the Ge nMOSFETs with ZrO(2) dielectric having a EOT of 0.83 nm obtain a peak effective electron mobility (μ(eff)) of 682 cm(2)/Vs, which is higher than that of the Si universal mobility at the medium inversion charge density (Q(inv)). On the other hand, the O(3) post-treatment with Al(2)O(3) interfacial layer can provide dramatically enhanced-μ(eff), achieving about 50% μ(eff) improvement as compared to the Si universal mobility at medium Q(inv) of 5 × 10(12) cm(−2). These results indicate the potential utilization of ZrO(2) dielectric in high-performance Ge nMOSFETs. Springer US 2021-08-04 /pmc/articles/PMC8339179/ /pubmed/34347193 http://dx.doi.org/10.1186/s11671-021-03577-0 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Nano Express
Chou, Lulu
Liu, Yan
Xu, Yang
Peng, Yue
Liu, Huan
Yu, Xiao
Han, Genquan
Hao, Yue
Ge N-Channel MOSFETs with ZrO(2) Dielectric Achieving Improved Mobility
title Ge N-Channel MOSFETs with ZrO(2) Dielectric Achieving Improved Mobility
title_full Ge N-Channel MOSFETs with ZrO(2) Dielectric Achieving Improved Mobility
title_fullStr Ge N-Channel MOSFETs with ZrO(2) Dielectric Achieving Improved Mobility
title_full_unstemmed Ge N-Channel MOSFETs with ZrO(2) Dielectric Achieving Improved Mobility
title_short Ge N-Channel MOSFETs with ZrO(2) Dielectric Achieving Improved Mobility
title_sort ge n-channel mosfets with zro(2) dielectric achieving improved mobility
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8339179/
https://www.ncbi.nlm.nih.gov/pubmed/34347193
http://dx.doi.org/10.1186/s11671-021-03577-0
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