Valence band engineering of GaAsBi for low noise avalanche photodiodes

Avalanche Photodiodes (APDs) are key semiconductor components that amplify weak optical signals via the impact ionization process, but this process’ stochastic nature introduces ‘excess’ noise, limiting the useful signal to noise ratio (or sensitivity) that is practically achievable. The APD materia...

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Detalles Bibliográficos
Autores principales: Liu, Yuchen, Yi, Xin, Bailey, Nicholas J., Zhou, Zhize, Rockett, Thomas B. O., Lim, Leh W., Tan, Chee H., Richards, Robert D., David, John P. R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8346614/
https://www.ncbi.nlm.nih.gov/pubmed/34362898
http://dx.doi.org/10.1038/s41467-021-24966-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8346614/
https://www.ncbi.nlm.nih.gov/pubmed/34362898
http://dx.doi.org/10.1038/s41467-021-24966-0

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