Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

[Image: see text] Silicon carbide power semiconductors overcome some limitations of silicon chips, and therefore, SiC is an attractive candidate for next-generation power electronics. In addition, the number of possible vertical devices that can be obtained on a given surface using the trench techni...

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Detalles Bibliográficos
Autores principales: Pirnaci, Massimo D., Spitaleri, Luca, Tenaglia, Dario, Perricelli, Francesco, Fragalà, Maria Elena, Bongiorno, Corrado, Gulino, Antonino
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8359159/
https://www.ncbi.nlm.nih.gov/pubmed/34396012
http://dx.doi.org/10.1021/acsomega.1c02905

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8359159/
https://www.ncbi.nlm.nih.gov/pubmed/34396012
http://dx.doi.org/10.1021/acsomega.1c02905

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