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Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers
[Image: see text] Silicon carbide power semiconductors overcome some limitations of silicon chips, and therefore, SiC is an attractive candidate for next-generation power electronics. In addition, the number of possible vertical devices that can be obtained on a given surface using the trench techni...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8359159/ https://www.ncbi.nlm.nih.gov/pubmed/34396012 http://dx.doi.org/10.1021/acsomega.1c02905 |