Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination.

Multilayered heterostructures comprising of In(2)O(3), SnO(2), and Al(2)O(3) were studied for their application in thin‐film transistors (TFT). The compositional influence of tin oxide on the properties of the thin‐film, as well as on the TFT characteristics is investigated. The heterostructures are...

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Detalles Bibliográficos
Autores principales: Büschges, M. Isabelle, Hoffmann, Rudolf C., Regoutz, Anna, Schlueter, Christoph, Schneider, Jörg J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2021
Materias:
Full Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8362207/
https://www.ncbi.nlm.nih.gov/pubmed/34002896
http://dx.doi.org/10.1002/chem.202101126

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8362207/
https://www.ncbi.nlm.nih.gov/pubmed/34002896
http://dx.doi.org/10.1002/chem.202101126

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