Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system

Ideal resistive switching in resistive random-access memory (RRAM) should be ensured for synaptic devices in neuromorphic systems. We used an Ag/ZnO/TiN RRAM structure to investigate the effects of nonideal resistive switching, such as an unstable high-resistance state (HRS), negative set (N-set), a...

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Detalles Bibliográficos
Autores principales: Park, Jongmin, Ryu, Hojeong, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8367949/
https://www.ncbi.nlm.nih.gov/pubmed/34400734
http://dx.doi.org/10.1038/s41598-021-96197-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8367949/
https://www.ncbi.nlm.nih.gov/pubmed/34400734
http://dx.doi.org/10.1038/s41598-021-96197-8

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