Ambipolar Charge Storage in Type‐I Core/Shell Semiconductor Quantum Dots toward Optoelectronic Transistor‐Based Memories

Efficient charge storage media play a pivotal role in transistor‐based memories and thus are under intense research. In this work, the charge storage ability of type‐I InP/ZnS core/shell quantum dots is well revealed through studying a pentacene‐based organic transistor with the quantum dots (QDs) i...

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Detalles Bibliográficos
Autores principales: hu, Hao, Wen, Guohao, Wen, Jiamin, Huang, Long‐Biao, Zhao, Meng, Wu, Honglei, Sun, Zhenhua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2021
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8373160/
https://www.ncbi.nlm.nih.gov/pubmed/34174170
http://dx.doi.org/10.1002/advs.202100513

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8373160/
https://www.ncbi.nlm.nih.gov/pubmed/34174170
http://dx.doi.org/10.1002/advs.202100513

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