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Simulation of gas sensing mechanism of porous metal oxide semiconductor sensor based on finite element analysis
In recent years, finite element analysis is increasingly adopted to simulate the mechanism of metal oxide semiconductor (MOS) resistive gas sensors. In this article, the chemical reaction engineering module in the COMSOL Multiphysics tool is used to describe the dynamic equilibrium process of oxygen...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8387441/ https://www.ncbi.nlm.nih.gov/pubmed/34433870 http://dx.doi.org/10.1038/s41598-021-96591-2 |