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Simulation of gas sensing mechanism of porous metal oxide semiconductor sensor based on finite element analysis

In recent years, finite element analysis is increasingly adopted to simulate the mechanism of metal oxide semiconductor (MOS) resistive gas sensors. In this article, the chemical reaction engineering module in the COMSOL Multiphysics tool is used to describe the dynamic equilibrium process of oxygen...

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Detalles Bibliográficos
Autores principales:	Li, Songlin, Zhang, Min, Wang, Hai
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8387441/ https://www.ncbi.nlm.nih.gov/pubmed/34433870 http://dx.doi.org/10.1038/s41598-021-96591-2

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