Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes

Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. However, as technology nodes shrink, RRAM faces many iss...

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Detalles Bibliográficos
Autores principales: Zhang, Donglin, Peng, Bo, Zhao, Yulin, Han, Zhongze, Hu, Qiao, Liu, Xuanzhi, Han, Yongkang, Yang, Honghu, Cheng, Jinhui, Ding, Qingting, Jiang, Haijun, Yang, Jianguo, Lv, Hangbing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398062/
https://www.ncbi.nlm.nih.gov/pubmed/34442535
http://dx.doi.org/10.3390/mi12080913

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398062/
https://www.ncbi.nlm.nih.gov/pubmed/34442535
http://dx.doi.org/10.3390/mi12080913

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