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A Review on the Properties and Applications of WO(3) Nanostructure-Based Optical and Electronic Devices
Tungsten oxide (WO(3)) is a wide band gap semiconductor with unintentionally n-doping performance, excellent conductivity, and high electron hall mobility, which is considered as a candidate material for application in optoelectronics. Several reviews on WO(3) and its derivatives for various applica...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398115/ https://www.ncbi.nlm.nih.gov/pubmed/34443966 http://dx.doi.org/10.3390/nano11082136 |