A Review on the Properties and Applications of WO(3) Nanostructure-Based Optical and Electronic Devices

Tungsten oxide (WO(3)) is a wide band gap semiconductor with unintentionally n-doping performance, excellent conductivity, and high electron hall mobility, which is considered as a candidate material for application in optoelectronics. Several reviews on WO(3) and its derivatives for various applications dealing with electrochemical, photoelectrochemical, hybrid photocatalysts, electrochemical energy storage, and gas sensors have appeared recently. Moreover, the nanostructured transition metal oxides have attracted considerable attention in the past decade because of their unique chemical, photochromic, and physical properties leading to numerous other potential applications. Owing to their distinctive photoluminescence (PL), electrochromic and electrical properties, WO(3) nanostructure-based optical and electronic devices application have attracted a wide range of research interests. This review mainly focuses on the up-to-date progress in different advanced strategies from fundamental analysis to improve WO(3) optoelectric, electrochromic, and photochromic properties in the development of tungsten oxide-based advanced devices for optical and electronic applications including photodetectors, light-emitting diodes (LED), PL properties, electrical properties, and optical information storage. This review on the prior findings of WO(3)-related optical and electrical devices, as well as concluding remarks and forecasts will help researchers to advance the field of optoelectric applications of nanostructured transition metal oxides.