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A Review on the Properties and Applications of WO(3) Nanostructure-Based Optical and Electronic Devices

Tungsten oxide (WO(3)) is a wide band gap semiconductor with unintentionally n-doping performance, excellent conductivity, and high electron hall mobility, which is considered as a candidate material for application in optoelectronics. Several reviews on WO(3) and its derivatives for various applica...

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Detalles Bibliográficos
Autores principales:	Yao, Yu, Sang, Dandan, Zou, Liangrui, Wang, Qinglin, Liu, Cailong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Review
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398115/ https://www.ncbi.nlm.nih.gov/pubmed/34443966 http://dx.doi.org/10.3390/nano11082136

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