Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method

In this paper, the conditions of the dip-coating method of SiO(2) nanospheres are optimized, and a neatly arranged single-layer SiO(2) array is obtained. On this basis, a “top-down” inductively coupled plasma (ICP) technique is used to etch the p-GaN layer to prepare a periodic triangular nanopore a...

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Detalles Bibliográficos
Autores principales: Yue, Wenkai, Li, Peixian, Zhou, Xiaowei, Wang, Yanli, Wu, Jinxing, Bai, Junchun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398248/
https://www.ncbi.nlm.nih.gov/pubmed/34443840
http://dx.doi.org/10.3390/nano11082009

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398248/
https://www.ncbi.nlm.nih.gov/pubmed/34443840
http://dx.doi.org/10.3390/nano11082009

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