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Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method
In this paper, the conditions of the dip-coating method of SiO(2) nanospheres are optimized, and a neatly arranged single-layer SiO(2) array is obtained. On this basis, a “top-down” inductively coupled plasma (ICP) technique is used to etch the p-GaN layer to prepare a periodic triangular nanopore a...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398248/ https://www.ncbi.nlm.nih.gov/pubmed/34443840 http://dx.doi.org/10.3390/nano11082009 |
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author | Yue, Wenkai Li, Peixian Zhou, Xiaowei Wang, Yanli Wu, Jinxing Bai, Junchun |
author_facet | Yue, Wenkai Li, Peixian Zhou, Xiaowei Wang, Yanli Wu, Jinxing Bai, Junchun |
author_sort | Yue, Wenkai |
collection | PubMed |
description | In this paper, the conditions of the dip-coating method of SiO(2) nanospheres are optimized, and a neatly arranged single-layer SiO(2) array is obtained. On this basis, a “top-down” inductively coupled plasma (ICP) technique is used to etch the p-GaN layer to prepare a periodic triangular nanopore array. After the etching is completed, the compressive stress in the epitaxial wafer sample is released to a certain extent. Then, die processing is performed on the etched LED epitaxial wafer samples. The LED chip with an etching depth of 150 nm has the highest overall luminous efficiency. Under a 100 mA injection current, the light output power (LOP) of the etched 150 nm sample is 23.61% higher than that of the original unetched sample. |
format | Online Article Text |
id | pubmed-8398248 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-83982482021-08-29 Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method Yue, Wenkai Li, Peixian Zhou, Xiaowei Wang, Yanli Wu, Jinxing Bai, Junchun Nanomaterials (Basel) Article In this paper, the conditions of the dip-coating method of SiO(2) nanospheres are optimized, and a neatly arranged single-layer SiO(2) array is obtained. On this basis, a “top-down” inductively coupled plasma (ICP) technique is used to etch the p-GaN layer to prepare a periodic triangular nanopore array. After the etching is completed, the compressive stress in the epitaxial wafer sample is released to a certain extent. Then, die processing is performed on the etched LED epitaxial wafer samples. The LED chip with an etching depth of 150 nm has the highest overall luminous efficiency. Under a 100 mA injection current, the light output power (LOP) of the etched 150 nm sample is 23.61% higher than that of the original unetched sample. MDPI 2021-08-05 /pmc/articles/PMC8398248/ /pubmed/34443840 http://dx.doi.org/10.3390/nano11082009 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Yue, Wenkai Li, Peixian Zhou, Xiaowei Wang, Yanli Wu, Jinxing Bai, Junchun Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method |
title | Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method |
title_full | Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method |
title_fullStr | Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method |
title_full_unstemmed | Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method |
title_short | Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method |
title_sort | improvement in the output power of near-ultraviolet leds of p-gan nanorods through sio(2) nanosphere mask lithography with the dip-coating method |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398248/ https://www.ncbi.nlm.nih.gov/pubmed/34443840 http://dx.doi.org/10.3390/nano11082009 |
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