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Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method

In this paper, the conditions of the dip-coating method of SiO(2) nanospheres are optimized, and a neatly arranged single-layer SiO(2) array is obtained. On this basis, a “top-down” inductively coupled plasma (ICP) technique is used to etch the p-GaN layer to prepare a periodic triangular nanopore a...

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Detalles Bibliográficos
Autores principales: Yue, Wenkai, Li, Peixian, Zhou, Xiaowei, Wang, Yanli, Wu, Jinxing, Bai, Junchun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398248/
https://www.ncbi.nlm.nih.gov/pubmed/34443840
http://dx.doi.org/10.3390/nano11082009
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author Yue, Wenkai
Li, Peixian
Zhou, Xiaowei
Wang, Yanli
Wu, Jinxing
Bai, Junchun
author_facet Yue, Wenkai
Li, Peixian
Zhou, Xiaowei
Wang, Yanli
Wu, Jinxing
Bai, Junchun
author_sort Yue, Wenkai
collection PubMed
description In this paper, the conditions of the dip-coating method of SiO(2) nanospheres are optimized, and a neatly arranged single-layer SiO(2) array is obtained. On this basis, a “top-down” inductively coupled plasma (ICP) technique is used to etch the p-GaN layer to prepare a periodic triangular nanopore array. After the etching is completed, the compressive stress in the epitaxial wafer sample is released to a certain extent. Then, die processing is performed on the etched LED epitaxial wafer samples. The LED chip with an etching depth of 150 nm has the highest overall luminous efficiency. Under a 100 mA injection current, the light output power (LOP) of the etched 150 nm sample is 23.61% higher than that of the original unetched sample.
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spelling pubmed-83982482021-08-29 Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method Yue, Wenkai Li, Peixian Zhou, Xiaowei Wang, Yanli Wu, Jinxing Bai, Junchun Nanomaterials (Basel) Article In this paper, the conditions of the dip-coating method of SiO(2) nanospheres are optimized, and a neatly arranged single-layer SiO(2) array is obtained. On this basis, a “top-down” inductively coupled plasma (ICP) technique is used to etch the p-GaN layer to prepare a periodic triangular nanopore array. After the etching is completed, the compressive stress in the epitaxial wafer sample is released to a certain extent. Then, die processing is performed on the etched LED epitaxial wafer samples. The LED chip with an etching depth of 150 nm has the highest overall luminous efficiency. Under a 100 mA injection current, the light output power (LOP) of the etched 150 nm sample is 23.61% higher than that of the original unetched sample. MDPI 2021-08-05 /pmc/articles/PMC8398248/ /pubmed/34443840 http://dx.doi.org/10.3390/nano11082009 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Yue, Wenkai
Li, Peixian
Zhou, Xiaowei
Wang, Yanli
Wu, Jinxing
Bai, Junchun
Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method
title Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method
title_full Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method
title_fullStr Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method
title_full_unstemmed Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method
title_short Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method
title_sort improvement in the output power of near-ultraviolet leds of p-gan nanorods through sio(2) nanosphere mask lithography with the dip-coating method
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398248/
https://www.ncbi.nlm.nih.gov/pubmed/34443840
http://dx.doi.org/10.3390/nano11082009
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