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Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method
In this paper, the conditions of the dip-coating method of SiO(2) nanospheres are optimized, and a neatly arranged single-layer SiO(2) array is obtained. On this basis, a “top-down” inductively coupled plasma (ICP) technique is used to etch the p-GaN layer to prepare a periodic triangular nanopore a...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398248/ https://www.ncbi.nlm.nih.gov/pubmed/34443840 http://dx.doi.org/10.3390/nano11082009 |