Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

An InGaN laser diode with InGaN–GaN–InGaN delta barriers was designed and investigated numerically. The laser power–current–voltage performance curves, carrier concentrations, current distributions, energy band structures, and non-radiative and stimulated recombination rates in the quantum wells wer...

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Detalles Bibliográficos
Autores principales: Cheng, Liwen, Li, Zhenwei, Zhang, Jiayi, Lin, Xingyu, Yang, Da, Chen, Haitao, Wu, Shudong, Yao, Shun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398435/
https://www.ncbi.nlm.nih.gov/pubmed/34443901
http://dx.doi.org/10.3390/nano11082070

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398435/
https://www.ncbi.nlm.nih.gov/pubmed/34443901
http://dx.doi.org/10.3390/nano11082070

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