Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode

Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR) IMPATT diode is investigated in this paper fo...

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Detalles Bibliográficos
Autores principales: Dai, Yang, Ye, Qingsong, Dang, Jiangtao, Lu, Zhaoyang, Zhang, Weiwei, Lei, Xiaoyi, Zhang, Yunyao, Zhang, Han, Liao, Chenguang, Li, Yang, Zhao, Wu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398774/
https://www.ncbi.nlm.nih.gov/pubmed/34442541
http://dx.doi.org/10.3390/mi12080919

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398774/
https://www.ncbi.nlm.nih.gov/pubmed/34442541
http://dx.doi.org/10.3390/mi12080919

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