Tunable Planar Hall Effect in (Ga,Mn)(Bi,As) Epitaxial Layers

We have thoroughly investigated the planar Hall effect (PHE) in the epitaxial layers of the quaternary compound (Ga,Mn)(Bi,As). The addition of a small amount of heavy Bi atoms to the prototype dilute ferromagnetic semiconductor (Ga,Mn)As enhances significantly the spin–orbit coupling strength in it...

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Detalles Bibliográficos
Autores principales: Andrearczyk, Tomasz, Sadowski, Janusz, Wróbel, Jerzy, Figielski, Tadeusz, Wosinski, Tadeusz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398968/
https://www.ncbi.nlm.nih.gov/pubmed/34443005
http://dx.doi.org/10.3390/ma14164483

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8398968/
https://www.ncbi.nlm.nih.gov/pubmed/34443005
http://dx.doi.org/10.3390/ma14164483

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