Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure

For the first time, a novel germanium (Ge) bi-stable resistor (biristor) with a vertical pillar structure was implemented on a bulk substrate. The basic structure of the Ge pillar-typed biristor is a p-n-p bipolar junction transistor (BJT) with an open base (floating), which is equivalent to a gatel...

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Detalles Bibliográficos
Autores principales: Bae, Hagyoul, Lee, Geon-Beom, Hur, Jae, Park, Jun-Young, Kim, Da-Jin, Kim, Myung-Su, Choi, Yang-Kyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8399071/
https://www.ncbi.nlm.nih.gov/pubmed/34442521
http://dx.doi.org/10.3390/mi12080899

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8399071/
https://www.ncbi.nlm.nih.gov/pubmed/34442521
http://dx.doi.org/10.3390/mi12080899

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