Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

This work provides a comprehensive investigation of nitrogen and aluminum doping and its consequences for the physical properties of 3C-SiC. Free-standing 3C-SiC heteroepitaxial layers, intentionally doped with nitrogen or aluminum, were grown on Si (100) substrate with different 4° off-axis in a ho...

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Detalles Bibliográficos
Autores principales: Calabretta, Cristiano, Scuderi, Viviana, Anzalone, Ruggero, Mauceri, Marco, Crippa, Danilo, Cannizzaro, Annalisa, Boninelli, Simona, La Via, Francesco
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8399223/
https://www.ncbi.nlm.nih.gov/pubmed/34442923
http://dx.doi.org/10.3390/ma14164400

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8399223/
https://www.ncbi.nlm.nih.gov/pubmed/34442923
http://dx.doi.org/10.3390/ma14164400

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