Optimisation of Lapping Process Parameters for Single-Crystal 4H–SiC Using Orthogonal Experiments and Grey Relational Analysis

Lapping is one of the standard essential methods to realise the global planarization of SiC and other semiconductor substrates. It is necessary to deeply study the mechanism to obtain SiC lapping process parameters with a strong comprehensive lapping performance (i.e., high material removal rate (MR...

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Detalles Bibliográficos
Autores principales: Deng, Jiayun, Yan, Qiusheng, Lu, Jiabin, Xiong, Qiang, Pan, Jisheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8400076/
https://www.ncbi.nlm.nih.gov/pubmed/34442531
http://dx.doi.org/10.3390/mi12080910

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8400076/
https://www.ncbi.nlm.nih.gov/pubmed/34442531
http://dx.doi.org/10.3390/mi12080910

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